mitsubishi igbt modules CM1000DUC-34NF high power switching use insulated type 1 april-2012 CM1000DUC-34NF - mpd series using 5 th generation igbt and fwdi - i c ?.???????.?.. 1000 a v ces ?????..?...?.. 1700 v flat base type copper (non-plating) base plate rohs directive compliant dual switch (half-bridge) ul recognized under ul1557, file e323585 application ac motor control, motion/servo control, power supply, etc. outline drawing & internal connection dimension in mm internal connection tolerance otherwise specified division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1.2 di2 tr2 c2e1 e2 e2 (es2) c1 tr1 di1 g2 c2 (cs2) e1 (es1) g1 c1 (cs1)
mitsubishi igbt modules CM1000DUC-34NF high power switching use insulated type 2 april-2012 absolute maximum ratings (t j =25 c, unless otherwise specified) symbol item conditions rating unit v ces collector-emitter voltage g-e short-circuited 1700 v v ges gate-emitter voltage c-e short-circuited 20 v i c dc, t c =104 c (note2) 1000 i crm collector current pulse, repetitive (note3) 2000 a p tot total power dissipation t c =25 c (note2, 4) 8925 w i e (note1) t c =25 c (note2, 4) 1000 i erm (note1) emitter current (free wheeling diode forward current) pulse, repetitive (note3) 2000 a v isol isolation voltage terminals to base pl ate, rms, f=60 hz, ac 1 min 3500 v t j junction temperature - -40 ~ +150 t stg storage temperature (note7) -40 ~ +125 c electrical characteristics (t j =25 c, unless otherwise specified) limits symbol item conditions min. typ. max. unit i ces collector-emitter cut-off current v ce =v ces , g-e short-circuited - - 1 ma i ges gate-emitter leakage current v ge =v ges , c-e short-circuited - - 5 a v ge(th) gate-emitter threshold voltage i c =100 ma, v ce =10 v 6 7 8 v i c =1000 a (note5) , t j =25 c - 2.2 2.85 v cesat collector-emitter saturation voltage v ge =15 v t j =125 c - 2.45 - v c ies input capacitance - - 220 c oes output capacitance - - 25 c res reverse transfer capacitance v ce =10 v, g-e short-circuited - - 4.7 nf q g gate charge v cc =1000 v, i c =1000 a, v ge =15 v - 6000 - nc t d(on) turn-on delay time - - 600 t r rise time v cc =1000 v, i c =1000 a, v ge =15 v, - - 200 t d(off) turn-off delay time - - 1000 t f fall time r g =0.47 ? , inductive load - - 300 ns v ec (note1) emitter-collector voltage i e =1000 a, g-e short-circuited (note5) - 2.3 3.0 v t rr (note1) reverse recovery time v cc =1000 v, i e =1000 a, v ge =15 v, - - 500 ns q rr (note1) reverse recovery charge r g =0.47 ? , inductive load - 90 - c e on turn-on switching energy per pulse v cc =1000 v, i c =i e =1000 a, - 272.4 - e off turn-off switching energy per pulse v ge =15 v, r g =0.47 ? , t j =125 c, - 250.2 - e rr (note1) reverse recovery energy per pulse inductive load - 172.4 - mj r cc'+ee' internal lead resistance main terminals-chip, per switch, t c =25 c (note2) - 0.286 - m ? r g internal gate resistance per switch - 0.67 - ? thermal resistance characteristics limits symbol item conditions min. typ. max. unit r th(j-c)q junction to case, per igbt - - 14 k/kw r th(j-c)d thermal resistance (note2) junction to case, per fwdi - - 23 k/kw r th(c-s) contact thermal resistance (note2) case to heat sink, per 1/2 module, thermal grease applied (note6) - 12 - k/kw mechanical characteristics limits symbol item conditions min. typ. max. unit m t main terminals m 6 screw 3.5 4.0 4.5 m s mounting torque mounting to heat sink m 6 screw 3.5 4.0 4.5 nm m weight - - 1450 - g e c flatness of base plate on the centerline x, y1, y2 (note8) -50 - +100 m
mitsubishi igbt modules CM1000DUC-34NF high power switching use insulated type 3 april-2012 recommended operating conditions limits symbol item conditions min. typ. max. unit v cc (dc) supply voltage applied across c1-e2 - 1000 1100 v geon gate (-emitter drive) voltage applied across g1-es1/g2-es2 13.5 15.0 16.5 v r g external gate resistance per switch 0.47 - 4.7 ? note1. represent ratings and characteristics of the ant i-parallel, emitter-collector free wheeling diode (fwdi). 2. case temperature (t c ) and heat sink temperature (t s ) are defined on the each surface of base plate and heat sink just under the chips. (refer to the figure of chip location) the heat sink thermal resistance {r th(s-a) } should measure just under the chips. 3. pulse width and repetition rate should be su ch that the device junction temperature (t j ) dose not exceed t jmax rating. 4. junction temperature (t j ) should not increase beyond t jmax rating. 5. pulse width and repetition rate should be such as to cause neglig ible temperature rise. (refer to the figure of test circuit ) 6. typical value is measured by us ing thermally conductive grease of =0.9 w/(mk). 7. the operation temperature is restrained by the permission temperature of female connector housing. 8. base plate flatness measurement points are as in the following figure. +: convex -: concave +: convex bottom bottom label side bottom y1 x 39 mm 39 mm y2 -: concave 9. generally, the company name, the brand name listed in this ma terial are the trademark of the companies or registered tradem arks.
mitsubishi igbt modules CM1000DUC-34NF high power switching use insulated type 4 april-2012 chip location (top view) dimension in mm, tolerance: 1 mm tr1/tr2: igbt, di1/di2: fwdi. each mark points the center position of each chip.
mitsubishi igbt modules CM1000DUC-34NF high power switching use insulated type 5 april-2012 test circuit and waveforms i c c2e1 e2 es2 g2 es1 g1 v short - circuited c1 v ge =15 v cs1 cs2 i c c2e1 e2 es2 g2 es1 g1 v short - circuited c1 v ge =15 v cs1 cs2 i e c2e1 e2 es2 g2 es1 g1 v short - circuited c1 cs1 cs2 short - circuited i e c2e1 e2 es2 g2 es1 g1 v short - circuited c1 cs1 cs2 short - circuited tr1 tr2 di1 di2 v cesat test circuit v ec test circuit t t f t r t d(on) i c 10% 90 % 90 % v ge v cc r g -v ge +v ge -v ge load 0 v 0 a + 0 v c e v ge 0 v t d(off) t i e i c c1 e2 c2e1 g1 es1 g2 es2 cs1 cs2 i rr q rr =0.5i rr t rr 0.5i rr t t rr i e 0 a i e switching characteristics test circuit and waveforms t rr , q rr test waveform 0.1i c m i cm v cc v ce i c t 0 e on 0.1v c c 0.1v cc v ce i cm v ce i c t 0 e off 0.02 i c m i em v ec i e t 0 v e rr t v cc 0 a igbt turn-on switching energy igbt turn-off switching energy fwdi reverse recovery energy turn-on / turn-off switching energy and reverse recovery energy integral range
mitsubishi igbt modules CM1000DUC-34NF high power switching use insulated type 6 april-2012 performance curves output characteristics (typical) collector-emitter saturation voltage characteristics (typical) t j =25 c (chip) v ge =15 v (chip) collector current i c (a) 0 500 1000 1500 2000 0246810 collector-emitter saturation voltage v cesat (v) 0 1 2 3 4 0 500 1000 1500 2000 collector-emitter voltage v ce (v) collector current i c (a) collector-emitter saturation voltage characteristics (typical) free wheeling diode forward characteristics (typical) t j =25 c (chip) g-e short-circuited (chip) collector-emitter saturation voltage v cesat (v) 0 2 4 6 8 10 6 8 10 12 14 16 18 20 emitter current i e (a) 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 gate-emitter voltage v ge (v) emitter-collector voltage v ec (v) t j =125 c t j =25 c v ge =20 v 12 v 11 v 10 v 9 v 13.5 v 15 v t j =125 c t j =25 c i c =2000 a i c =1000 a i c =400 a
mitsubishi igbt modules CM1000DUC-34NF high power switching use insulated type 7 april-2012 half-bridge switching characteristics (typical) half-bridge switching characteristics (typical) v cc =1000 v, v ge =15 v, r g =0.47 ? , t j =125 c, inductive load v cc =1000 v, i c =1000 a, v ge =15 v, t j =125 c, inductive load switching time (ns) 10 100 1000 10000 100 1000 10000 switching time (ns) 10 100 1000 10000 0.1 1 10 collector current i c (a) external gate resistance r g ( ? ) half-bridge switching characteristics (typical) half-bridge switching characteristics (typical) v cc =1000 v, v ge =15 v, r g =0.47 ? , t j =125 c, inductive load, per pulse v cc =1000 v, i c /i e =1000 a, v ge =15 v, t j =125 c, inductive load, per pulse switching energy (mj) reverse recovery energy (mj) 10 100 1000 100 1000 10000 switching energy (mj) reverse recovery energy (mj) 10 100 1000 10000 0.1 1 10 collector current i c (a) emitter current i e (a) external gate resistance r g ( ? ) t d(on) t r t d(off) t f t d(on) t r t f t d(off) e on e off e rr e on e off e rr
mitsubishi igbt modules CM1000DUC-34NF high power switching use insulated type 8 april-2012 capacitance characteristics (typical) free wheeling diode reverse recovery characteristics (typical) g-e short-circuited, t j =25 c v cc =1000 v, v ge =15 v, r g =0.47 ? , t j =25 c, inductive load capacitance (nf) 0.1 1 10 100 1000 0.1 1 10 100 t rr (ns), i rr (a) 100 1000 10000 100 1000 10000 collector-emitter voltage v ce (v) emitter current i e (a) gate charge characteristics (typical) transient thermal impedance characteristics (maximum) i c =1000 a, t j =25 c single pulse, t c =25c gate-emitter voltage v ge (v) 0 5 10 15 20 0 2000 4000 6000 8000 10000 normalized transient thermal impedance z th(j-c) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 r th(j-c)q =14 k/kw, r th(j-c)d =23 k/kw gate charge q g (nc) time (s) c ies c oes c res i rr t rr v cc =800 v v cc =1000 v
mitsubishi igbt modules CM1000DUC-34NF high power switching use insulated type 9 april-2012 keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effort into making semiconductor pr oducts better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or prope rty damage. remember to give due consideration to safe ty when making your circuit des igns, with appropriate measur es such as (i) placement of substitutive, auxiliary circuits, (ii) us e of non-flammable material or (iii) pr evention against any ma lfunction or mishap. notes regarding these materials these materials are intended as a reference to assist our customers in the selecti on of the mitsubishi semiconductor product b est suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belo nging to mitsubishi electric corpor ation or a third party. mitsubishi electric corporation assumes no responsibility for any damage, or infringem ent of any third-party's rights, origina ting in the use of any product data, diagrams, charts, programs, algorithms, or circuit applicati on examples contained in these materials. all information contained in these mate rials, including product data, diagrams, c harts, programs and algorithms represents inf ormation on products at the time of publication of these materials, and are subj ect to change by mitsubishi el ectric corporation without notice due to product improvements or other reasons. it is therefore recomm ended that customers contact mits ubishi electric corporation or an authorized mitsubishi semiconductor product distributor for the latest product in formation before purchas ing a product listed h erein. the information described here may contain te chnical inaccuracies or typographical erro rs. mitsubishi electr ic corporation assu mes no responsibility for any damage, liability, or other lo ss rising from these i naccuracies or errors. please also pay attention to information published by mitsubishi electric corporati on by various means, including the mitsubish i semiconductor home page (http:// www.mitsubish ichips.com/global/index.html). when using any or all of the information contained in these materials, including product data, diagr ams, charts, programs, and algorithms, please be sure to evaluate a ll information as a total system before making a final decisi on on the applicability of the information and products. mitsubish i electric corporation assumes no responsibili ty for any damage, liability or other loss res ulting from the information contained herein. mitsubishi electric corporati on semiconductors are not designed or manufactured for use in a device or system that is used und er circumstances in which human life is potentially at stake. pleas e contact mitsubishi electric corporation or an authorized mits ubishi semiconductor product distri butor when considering the use of a product contained herein for any specific purposes, such as app aratus or systems for transportation, vehicular, medica l, aerospace, nuclear, or undersea repeater use. the prior written approval of mits ubishi electric corporation is necessary to reprint or reproduce in whole or in part these m aterials. if these products or technologi es are subject to the japanese export control restrictions, they must be exported under a licen se from the japanese government and cannot be imported into a country other than t he approved destination. any diversion or reexport contrary to t he export control laws and regulations of j apan and/or the country of destination is pro hibited. please contact mitsubishi elec tric corporation or an authorized mitsubishi se miconductor product distri butor for further detai ls on these materials or the produc ts contained therein.
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